Semiconductor
Stack Tube Diffusion Furnace
- Annealing, Oxidation & high temperature processing
- Wafer size up to 300 mm
- 3 or 4 tube stacks
- Horizontal Laminar Flow (Class 10)
- 400 to 1325 Deg. C ; 5 zone elements with 1 meter flat zone
- Spike and Profile TC control with +/- 0.5 Deg. C control and Auto profiling capability
- Automation solutions
- Source cabinet – L shaped layout with Separately tube foyer and gases; vertically mounted gas panes